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MGSF2N02ELT1G دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | MGSF2N02ELT1G |
|---|---|
| حجم فایل | 78.357 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 5 |
دانلود دیتاشیت MGSF2N02ELT1G |
دانلود دیتاشیت |
|---|
سایر مستندات
MGSF2N02EL, MVSF2N02EL 5 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi MGSF2N02ELT1G
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 1.25W
- Total Gate Charge (Qg@Vgs): 3.5nC@4V
- Drain Source Voltage (Vdss): 20V
- Input Capacitance (Ciss@Vds): 150pF@5V
- Continuous Drain Current (Id): 2.8A
- Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 85mΩ@4.5V,3.6A
- Package: SOT-23-3
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 5V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Base Part Number: MGSF2
- detail: N-Channel 20V 2.8A (Ta) 1.25W (Ta) Surface Mount SOT-23-3 (TO-236)